| PART |
Description |
Maker |
| K4F640412D K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG[Samsung semiconductor]
|
| KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| GM71C4400C-60 GM71C4400C-70 GM71C4400C-80 GM71C440 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
|
LG Semicon Co.,Ltd.
|
| MB814405D-60L MB814405D-7OL |
1M ×4BIT
Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| GM71C4400CJ-80 GM71C4400CLJ-60 GM71C4400CLJ-70 GM7 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM 1,048,576字4位的CMOS动态随机存储器
|
LG, Corp.
LG Semicon Co.,Ltd.
|
| K4E170411D K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
|
Bourns, Inc.
Samsung Semiconductor Co., Ltd.
|
| NN514256AT-40 NN514256AT-45 NN514256 NN514256A NN5 |
RESISTOR-METAL FILM 的CMOS 256 × 4位动态随机存储器
CMOS 256K x 4bit Dynamic RAM 的CMOS 256 × 4位动态随机存储器
RES, 11.0 OHM 63MW 75V 1% 100PPM CHIP, 0603
|
http://
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| UPD42S17405LA-60 UPD4217405LA-50 |
16M-BIT DYNAMIC RAM
|
NEC
|
| HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
