| PART |
Description |
Maker |
| FMS6G10US60S |
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMS6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMS6G15US60S |
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMS7G10US60S |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMC6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| FMM7G50US60I |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMC6G50US60 |
IGBT
Compact & Complex Module
Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
|
Fairchild Semiconductor Corporation
|
| FMC7G10US60 7070-12-ZDO |
IGBT
Compact & Complex Module
Building Entrance Terminal
Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:31.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 31.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
|
FAIRCHILD[Fairchild Semiconductor]
Bourns Inc.
Fairchild Semiconductor Corporation
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| TT70N |
Netz-Thyristor-Modul Phase Control Thyristor Modul
|
EUPEC[eupec GmbH]
|
| FF1400R12IP4 |
IGBT Modules up to 1200V Dual ; Package: AG-PRIME3-1; IC (max): 1,400.0 A; VCE(sat) (typ): 1.75 V; Configuration: Dual Modules; Technology: IGBT4; Housing: PrimePACK 3;
PrimePACK? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
PrimePACK?? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
|
Infineon Technologies AG
|
| MG200J6ES61 MG200F6ES61 |
Six IGBTMOD⑩ Compact IGBT Series Module 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
