| PART |
Description |
Maker |
| FDD2670 |
200V N-Channel PowerTrench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT20M11JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Advanced Power Technology
|
| APT20M45SVFR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M45BVR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M36BFLL APT20M36SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 65A 0.036 Ohm
|
Advanced Power Technology Ltd.
|
| USB10H |
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET(双P沟道 PowerTrench MOS场效应管（漏电流-1.9A, 漏源电压-20V，导通电.17Ω 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Vishay Intertechnology, Inc.
|
| STN1N20 6772 |
From old datasheet system
N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR
|
STMicroelectronics
|
| 2SJ201O 2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
|
TOSHIBA
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| IRF9240 IRF9240-15 |
Simple Drive Requirements
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)
HEXFET?TRANSISTORS 200V, P-CHANNEL
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
