| PART |
Description |
Maker |
| CYNB25-400 CYNA25-400 CYNA25-1000 |
SCR 25A 400V NON-ISOLAT TO-220AB 25 A, 400 V, SCR, TO-220AB
SCR 25A 400V ISOLATED TO-220AB 25 A, 400 V, SCR, TO-220AB
SCR 1000V 25A ISOLATED TO220AB 25 A, 1000 V, SCR, TO-220AB
|
Crydom, Inc.
CRYDOM CORP
|
| APT10035JLL |
POWER MOS 7 1000V 25A 0.350 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| APT10050JLC |
POWER MOS VI 1000V 19A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| MIP0221SY MIP0222SY MIP0223SY MIP0224SY MIP0225SY |
Silicon MOS IC
ISOLATOR, INT'LOCK 25A 3 POLEISOLATOR, INT'LOCK 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:13kW
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| APT12040JVR |
POWER MOS V 1200V 26A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| 25FR120 25FR120M A25FR120 A25FR120M 25FR100 25FR10 |
100V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
From old datasheet system
800V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARDRECOVERYDIODES
400V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
标准恢复二极
STANDARD RECOVERY DIODES
|
IRF[International Rectifier]
InternationalRectifier
|
