| PART |
Description |
Maker |
| APT10035JLL |
POWER MOS 7 1000V 25A 0.350 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 11A 1.000 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT10090BFLL APT10090SFLL |
POWER MOS 7 1000V 12A 0.900 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
From old datasheet system
Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| P101 P124 P121 P103 P135K P100 P101K P101KW P101W |
1200V 25A 2 SCR Lateral Bridge in a PACE-Pak package
1000V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
1000V 25A 2 SCR Lateral Bridge in a PACE-Pak package
800V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
800V 25A 2 SCR Lateral Bridge in a PACE-Pak package
600V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
600V 25A 2 SCR Lateral Bridge in a PACE-Pak package
400V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
400V 25A 2 SCR Lateral Bridge in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge in a PACE-Pak package
From old datasheet system
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
GT 3C 3#16S PIN RECP BOX RM
|
IRF[International Rectifier]
|
| APT10025JVFR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
| CRNA25-1000 CRNA25-1000PT CRNA25-400PT |
DIODE RECT 1000V 25A ISO TO220AB 15.9 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
15.9 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Crydom, Inc.
CRYDOM CORP
|
| RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
