| PART |
Description |
Maker |
| SLD104AV |
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
| SLD105VL |
GaAlAs Laser Diode For Portable CD(镓铝砷激光二极管(用于随身CD)) 发动器激光二极管便携CD（镓铝砷激光二极管（用于随身光盘）
|
Sony, Corp.
|
| TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢？3毫米（T.1）包
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| LNC802PS |
GaAlAs Semiconductor Laser
|
PANASONIC[Panasonic Semiconductor]
|
| LNC701PS |
GaAlAs Semiconductor Laser
|
PANASONIC[Panasonic Semiconductor]
|
| LNC704PS |
GaAlAs Semiconductor Laser
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| DL-3150-101 DL-3150-102 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
