| PART |
Description |
Maker |
| UPD45128163G5-A75L-9JF UPD45128841G5-A75L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行，LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| UPD45128163G5-A75LI-9JF-E UPD45128163-I-E UPD45128 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| M2V28S40TP-8L M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 |
128M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYB39S512400AEL-7.5 |
128M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| M2S28D30ATP-75 M2S28D40ATP M2V28D40ATP-10 M2V28D40 |
128M Double Data Rate Synchronous DRAM 128M的双数据速率同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| DPSD128MX4WY5-DP-XX15I |
128M X 4 SYNCHRONOUS DRAM MODULE, 15 ns, PDSO54 LEADLESS, TSOP-54
|
Spacecraft Components, Corp.
|
| MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http://
NEC[NEC]
NEC Corp.
Performance Semiconductor, Corp.
|
| HY57V28162 HY57V281620HCT HY57V281620HCLT |
8Mx16|3.3V|4K|6|SDR SDRAM - 128M
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX
|
| EBE10UE8ACFA-8E-E |
128M X 64 SYNCHRONOUS DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Elpida Memory, Inc.
|
| MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http://
Elpida Memory
|
