| PART |
Description |
Maker |
| FDP2614 |
200V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor
|
| APT20M45SVFR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M45BVR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M36BLL APT20M36SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 65A 0.036 Ohm
|
Advanced Power Technology
|
| APT20M34BLL APT20M34SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 200V 74A 0.034 Ohm
|
Advanced Power Technology, Ltd.
|
| 2SJ201O 2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
|
TOSHIBA
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FDN302 FDN302P FDN302PNL FDN302PL99Z |
CAP CER 2.2UF 16V 10% X5R 1206 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
P-Channel 2.5V Specified PowerTrench MOSFET
P-Channel 2.5V Specified PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
