| PART |
Description |
Maker |
| GS2M GS2B GS2G GS2J GS2K GS2A GS2D |
2.0 Amp Silicon Rect.0 Amp Silicon Rectifier 50 to 1000 Voltsifier 50 to 1000 OLTS
|
Micro Commercial Components Corp.
|
| SBR10150 SBR10150-08 |
10.0 Amp Schottky Barrier Rect
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| MB351W-BP MB354W-BP MB3510W-BP MB3505W-BP MB356W-B |
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE 35A 200V WIRE LEADS 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
天津环球磁卡股份有限公司
http://
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| SC275..5.SERIES |
SCHOTTKY DIE 275 x 275 mils
|
International Rectifier
|
| CMSZDA5V6 CMSZDA9V1 CMSZDA10V CMSZDA11V CMSZDA12V |
SMD Zener Diode Single: Standard
From old datasheet system
SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS
surface mount silicon Zener diodes 2.565 V, 0.275 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 3 V, 0.275 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| WSLT5931 WSLT59312L000FEA WSLT59312L000FEK WSLT593 |
Power Metal Strip? Resistors, High Temperature (275 °C) Low Value (down to 0.001 Ω), Surface Mount
Power Metal Strip庐 Resistors, High Temperature (275 掳C) Low Value (down to 0.001 惟), Surface Mount
Power Metal Strip㈢ Resistors, High Temperature (275 ∑C) Low Value (down to 0.001 ヘ), Surface Mount
|
Vishay Siliconix
|
| MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
