PART |
Description |
Maker |
GS2M GS2B GS2G GS2J GS2K GS2A GS2D |
2.0 Amp Silicon Rect.0 Amp Silicon Rectifier 50 to 1000 Voltsifier 50 to 1000 OLTS
|
Micro Commercial Components Corp.
|
NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. Silicon Power Rectifier Diode, 25 Amp Silicon Power Rectifier Diode 25 Amp Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K |
NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through DIODE ZENER 150MW 33V 0603 RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容 MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容 RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容 RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
|
ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|
MB251W-BP MB254W-BP MB2510W-BP MB2505W-BP MB256W-B |
25 Amp Single Phase Bridge Rectifier 50 to 1000 Volts RECT BRIDGE 25A 1000V WIRE LEADS 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
天津环球磁卡股份有限公司 http:// Micro Commercial Components, Corp. Micro Commercial Compon...
|
MC5619 |
FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE RECTIFIERS 0.275 A, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
|
BUP54.MODR1 BUP5409 |
50 A, 275 V, NPN, Si, POWER TRANSISTOR, TO-3 TO-3B, 2 PIN SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
TT electronics Semelab, Ltd. Seme LAB
|
MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
GBU4K-BP |
RECT BRIDGE GPP 4A 800V GBU 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Components, Corp.
|
CRNA20-1000 |
DIODE RECT 1000V 20A ISO TO220AB 12.7 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Crydom, Inc.
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