| PART |
Description |
Maker |
| MPS6717RLRA MPS6717_D ON2331 MPS6717 |
One Watt Amplifier Transistor(NPN Silicon) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
One Watt Amplifier Transistor 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AE
CASE 29?4, STYLE 1 TO?2 (TO?26AA)
From old datasheet system
|
ON Semiconductor
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2SC4617T1G |
NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| BC817-25-AE3-R BC817-40-AE3-R BC856-A-AE3-R BC817 |
NPN GENERAL PURPOSE AMPLIFIER npn型通用放大
NPN GENERAL PURPOSE AMPLIFIER 1500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
|
UNISONIC TECHNOLOGIES CO LTD
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 547B 548B BC546B BC547A BC546 BC548 |
NPN Silicon Amplifier Transistor 625mW 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Silicon Amplifier Transistor 625mW 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistor
|
Micro Commercial Compon...
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
Korea Electronics (KEC)
|
| KTC3880 KTC3911 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER) 外延平面NPN晶体管（高频低噪声放大器，甚高频波段放大器）
EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
|
KEC Holdings
KEC(Korea Electronics)
|
| 2SC3583-R35 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Renesas Electronics Corporation
|
| MCH4020-TL-H MCH402012 ENA1280A ENA1280 |
RF Transistor, 8V, 150mA, fT=16GHz, NPN Single MCPH4
NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier
|
ON Semiconductor
Sanyo Semicon Device
|
| KSH31 KSH31C KSH31CTF KSH31TF |
NPN Epitaxial Silicon Transistor
General Purpose Amplifier Low Speed Switching Applications 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| BC33825 BC33740 BC337 BC33840 BC33716 BC33725 BC33 |
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
RES 220 OHMS 1% 1/4W 1206 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
SWITCHING AND AMPLIFIER APPLICATIONS 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2SC5242 |
Power Amplifier Application NPN Transistor(功率放大器用NPN晶体 功率放大器应用NPN晶体管（功率放大器用npn型晶体管
NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
|
Toshiba, Corp.
|
| BD525 BD529 BD527 BD525-5 BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V.
NPN silicon annular amplifier transistor. 10 W, 60 V.
NPN SILICON AMPLIFIER TRANSISTORS
|
MOTOROLA[Motorola, Inc]
ETC
|
