| PART |
Description |
Maker |
| IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| ADAPTERS-TYPE-NSMA TYPE-NSMA TYPE-N_SMA ADAPTERS-T |
50OHM/ DC to 18 GHz
50OHM / DC to 18 GHz
50OHM, DC to 18 GHz
50OHM, DC to 18 GHz
|
RF连接
MINI[Mini-Circuits]
http://
|
| FAR-F5KA-897M50-D4DC |
EGSM Tx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
| RFP-250250-4X50-2 |
Chip Terminations 40 Watts, 50ohm
|
Anaren Microwave
|
| RFP-050100-1X50-2 |
Chip Terminations 5 Watts, 50ohm
|
Anaren Microwave
|
| FAR-F5KA-881M50-D4DB |
GSM850/WCDMA Rx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
| RFP-250375-4X50-2 |
Chip Terminations 150 Watts, 50ohm
|
Anaren Microwave
|
| BTRM-50_ BTRM-50 |
Termination BNC 50ohm DC to 2000 MHz
|
MINI[Mini-Circuits]
|
| 53259 |
POWER MOSFET OPTOCOUPLER 400V / 50ohm HERMETICALLY SEALED
|
MICROPAC[Micropac Industries]
|
| ZAPD-1 |
Power Splitter/Combiner 2 Way-0 50ohm 500 to 1000 MHz
|
Mini-Circuits
|
