PART |
Description |
Maker |
GA1A4M GA1A4M-T1 GA1A4M-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
GN1L3M GN1L3M-T2 GN1L3M-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
GN1L3Z GN1L3Z-T2 GN1L3Z-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
GA1F4M GA1F4M-T2 GA1F4M-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
GA1A4P GA1A4P-T1 GA1A4P-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
GA1F4N GA1F4N-T1 GA1F4N-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
GN1A4Z GN1A4Z-T2 GN1A4Z-T1 GN1A4ZM67 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 323 MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR Hybrid transistor
|
NEC, Corp.
|
STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics STMicroelectronics
|
2SD2143 2SD1866 2SD2397 |
Medium Power Transistor(Motor, Relay drive) (600V, 2A) 中等功率晶体管(电机,继电器驱动器)600V2A号) Medium Power Transistor(Motor/ Relay drive) (6010V/ 2A) Medium Power Transistor(Motor, Relay drive) (60?0V, 2A) Medium Power Transistor(Motor, Relay drive) (6010V, 2A)
|
Rohm Co., Ltd.
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
CE1A3Q CE1A3Q-T CE1A3Q-T-A |
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR COMPOUND TRANSISTOR Hybrid transistor TRANS DIGITAL BJT NPN 70V 2000MA 3SP-8 T/R
|
NEC Corp. NEC[NEC] NEC Electronics
|
AN1A3Q AN1A3Q-T AN1A3Q-T/JD AN1A3Q-T/JM AN1A3QC AN |
Hybrid transistor On-Chip Resistor PNP Silicon Epitaxial Transistor
|
NEC
|