| PART |
Description |
Maker |
| KTB631K KTB631 |
EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)
EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP/ MEDIUM SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1578 2SB1578GB2 2SB1578GB1 2SB1578-GB3 |
5 A, 60 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-243VAR 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor
|
NEC, Corp.
Panasonic Semiconductor
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NTE219 NTE130 |
Silicon Power Transistor Audio Power Amp / Medium Speed Switch
Silicon Power Transistor Audio Power Amp, Medium Speed Switch
|
NTE[NTE Electronics]
|
| 2SC4682 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| BD380 BD378 BD376 BD37610STU BD38010STU |
PNP Epitaxial Silicon Transistor
Medium Power Linear and Switching Applications
|
Fairchild Semiconductor
|
| BD13510STU BD139 BD135 BD137 BD13516S BD13516STU B |
NPN Epitaxial Silicon Transistor
Medium Power Linear and Switching Applications
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD638 2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| NTE315 |
Silicon NPN Transistor, Medium Power Amp
|
NTE[NTE Electronics]
|
| NE5520279A-T1-A |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET 3.2五，2瓦报
|
California Eastern Laboratories, Inc.
|
