| PART |
Description |
Maker |
| TC554001AFI TC554001AFI-10 TC554001AFI-10L TC55400 |
524,228 WORDS x 8 BIT STATIC RAM 524228字8位静态RAM
Circular Connector; No. of Contacts:55; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:17-35 RoHS Compliant: No
LJT 39C 38#22D 1#8(TWINAX) PIN
524228 WORDS x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM628512ALTTI HM628512ALTTI-7 HM628512ALTTI-8 HM62 |
524288-word x 8-bit High Speed CMOS Static RAM
|
HITACHI[Hitachi Semiconductor]
|
| HM628512SERIES 628512 HM628512LP-5 HM628512LP-5SL |
From old datasheet system
524288-word x 8-bit High Speed CMOS Static RAM
|
http://
Hitachi Metals, Ltd
|
| M5M54R08J-12 M5M54R08J-15 D98025 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M54R08AJ-10 M5M54R08AJ-12 M5M54R08AJ-15 D99020 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5 |
From old datasheet system
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5408BFP M5M5408BRT M5M5408BTP M5M5408BRT-70H M5 |
Memory>Low Power SRAM
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K6F4008S2CFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4008U1DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| THM362020S-10 THM362020S-80 THM362020SG-10 THM3620 |
2097152 WORDS x 36BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 36BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 36BIT DYNAMIC RAM MODULE
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
