PART |
Description |
Maker |
HN462716 HN462716G |
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY 2048 word x 8 Bit UV Erasable and EPROM
|
HITACHI[Hitachi Semiconductor]
|
HN2716 |
2048-word x 8bit Erasable and Electrically Programmable Only Memory
|
Hitachi,Ltd.
|
R1EX25008ASA00I R1EX25016ASA00I R1EX25008ATA00I R1 |
Serial Peripheral Interface 8k EEPROM (1024-word × 8-bit) 16k EEPROM (2048-word × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM 256×8 bit electrically erasable PROM 256?8 bit electrically erasable PROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM 5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM 16K I2C?/a> Serial EEPROM The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C ... 16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
BR24L16 BR24L16FJ-W BR24L16FVM-W BR24L16F-W BR24L1 |
2k8 bit electrically erasable PROM 2k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
MCM2716 |
2048 x 8-Bit UV Erasable PROM
|
Motorola
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
KM28C64A KM28C65A |
8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM
|
Samsung Electronic Samsung semiconductor
|
M5L27128K M5L27128K-2 |
131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|