| PART |
Description |
Maker |
| BAS21PG-15 |
Dual isolated high-voltage switching diode
|
NXP Semiconductors
|
| CYTA44D |
SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| PZ8GG-1515ZH30 PZ8GG-0505ZH30 PZ8GG-0512ZH30 PZ8GG |
Input voltage:12V, output voltage /-12V ( /-63mA), 3KV isolated 1.5W regulated dual output
Input voltage:15V, output voltage /-5V ( /-150mA), 3KV isolated 1.5W regulated dual output
Input voltage:5V, output voltage /-15V ( /-50mA), 3KV isolated 1.5W regulated dual output
Input voltage:5V, output voltage /-12V ( /-63mA), 3KV isolated 1.5W regulated dual output
Input voltage:5V, output voltage /-5V ( /-150mA), 3KV isolated 1.5W regulated dual output
PZ8GGxxxxZH30 3 KV ISOLATED 1.5 W REGULATED DUAL OUTPUT SIP12
Input voltage:12V, output voltage /-15V ( /-50mA), 3KV isolated 1.5W regulated dual output
Input voltage:12V, output voltage /-5V ( /-150mA), 3KV isolated 1.5W regulated dual output
|
PEAK[PEAK electronics GmbH]
|
| P8SG-247R2Z P8SG-0505Z P8SG-053R6Z P8SG-1205Z P8SG |
Input voltage:5V, output voltage /-3.6V ( /-200mA), 1KV isolated 1.5W regulated dual output
1 KV ISOLATED 1.5 W REGULATED DUAL OUTPUT DIP24 1千伏隔震1.5糯稳压双输出DIP24
|
PEAK[PEAK electronics GmbH]
|
| VB40100C |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VB40M120C VB40M120C-E3/8W VB40M120C-E3/4W |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VI40120C-E3_4W VB40120C-E3/4W V40120C-E3/45 VI4012 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V40150CHM3-4W V40150C-M3-4W VI40150CHM3-4W VI40150 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V40170PW-M3 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VB30100C |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay
|
| V40100G-E3 VB40100G-E3 VF40100G-E3 |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
