| PART |
Description |
Maker |
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1105WR BF1105 BF1105R |
CONNECTOR
N-channel dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF1107 BF1107W BF1107_1107W_3 |
From old datasheet system
N-channel single gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1102R BF1102 BF110200 BF1102-15 BF1102-2015 |
Dual N-channel dual gate MOS-FETs
|
NXP Semiconductors
Philips
Quanzhou Jinmei Electro...
|
| BF908 BF908-R-2015 BF908-R-15 |
Dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
|
| 2SK0665 2SK665 |
Silicon MOS FETs
From old datasheet system
Small-signal device - Small-signal FETs - MOS FETs
|
Panasonic Semiconductor
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1203 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| 3SK274 |
RF Dual Gate FETs
|
TOSHIBA
|
