PART |
Description |
Maker |
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M56163PG K4M56163PG-BC75 K4M56163PG-BC90 K4M5616 |
4M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
|
SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. Ironwood Electronics Bel Fuse, Inc.
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
UPD4516161A |
16M Bit Synchronous DRAM
|
NEC
|
UPD4516161 |
16M Bit Synchronous DRAM
|
NEC
|
W9825G6CH-6 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
WINBOND ELECTRONICS CORP
|
V54C3256164VHUJ7I |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
MT48LC16M32L2F5-10 |
16M X 32 SYNCHRONOUS DRAM, PBGA90
|
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