| PART |
Description |
Maker |
| R1RP0408DGE-2PR R1RP0408D R1RP0408DGE-2LR |
4M High Speed SRAM (512-kword 8-bit)
4M High Speed SRAM (512-kword ?8-bit)
4M High Speed SRAM (512-kword ?8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1LV0408DSP-5SI R1LV0408DSA-5SR R1LV0408DSP-5SR |
4M SRAM (512-kword 8-bit) 4分的SRAM12 - KWord的位）
4M SRAM (512-kword ??8-bit)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation.
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HM628512CLP-5SL HM628512CLP-7 HM628512CLFP-5SL HM6 |
4 M SRAM (512-kword ′ 8-bit)
4 M SRAM (512-kword 麓 8-bit)
4 M SRAM (512-kword 垄楼 8-bit)
4 M SRAM (512-kword ? 8-bit)
|
Renesas Electronics Corporation
|
| R1RP0416D-15 |
4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| HM62W16255HC HM62W16255HCJP-10 HM62W16255HCLJP-10 |
4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM6216255HC HM6216255HCJP-10 HM6216255HCLJP-10 HM6 |
4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
| HM62V16514LTTI-5SL |
Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit)
|
Renesas Electronics Corporation.
|
| HM62V16512I HM62V16512LBPI-5 HM62V16512LBPI-5SL |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM (512-KWORD X 16-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
