PART |
Description |
Maker |
BSP16T1 |
SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
BCP51 |
PNP Epitaxial Silicon Transistor; Package: SOT-223; No of Pins: 4; Container: Tape & Reel PNP General Purpose Amplifier
|
FAIRCHILD SEMICONDUCTOR CORP
|
PZT751T1 ON2781 PZT751T1_D PZT751T3 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT From old datasheet system
|
MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
|
BCP53-16T1G |
High Current Transistor PNP; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-261AA
|
ON Semiconductor
|
PZTA14T1 PZTA14T1_D ON2782 |
From old datasheet system SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
|
MOTOROLA[Motorola, Inc] ON Semi MOTOROLA[Motorola Inc]
|
STN4NF20L |
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET
|
ST Microelectronics STMicroelectronics
|
STN1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
STN3P6F6 |
P-channel 60 V, 0.13 Ω typ., 3 A STripFET VI DeepGATE Power MOSFET in a SOT-223 package
|
STMicroelectronics
|
IRFL110TR |
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
AUIRLL024N |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
|
International Rectifier
|