| PART |
Description |
Maker |
| PDTA124E PDTA124EEF PDTA124EM PDTA124ET PDTA124EEF |
PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors
NXP Semiconductors N.V.
|
| PDTA123E PDTA123EE PDTA123EEF PDTA123EK PDTA123EU |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
|
NXP Semiconductors
|
| PDTC114TU PDTC114TT PDTA114TM PDTA114T PDTA114TE P |
NPN resistor-equipped transistor
PNP resistor-equipped transistors; R1 = 10 kOHM R2 = open
PDTA114T series; PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTA143ZEF PDTA143ZU PDTA143ZK |
PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=4.7千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PDTA143TEF PDTA143TE PDTA143T PDTA143TK PDTA143TM |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = open
|
NXP Semiconductors
|
| PDTA143Z PDTA143ZE PDTA143ZEF PDTA143ZM PDTA143ZS |
PNP resistor-equipped transistors R1 = 4.7 kW, R2 = 47 kW
PNP resistor-equipped transistors R1 = 4.7 kOhm, R2 = 47 kOhm 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PEMD13 PUMD13 |
NPN-PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-PNP配电阻型晶体管，R1=4.7千欧姆，R2=47千欧
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
NPN/PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PDTA114TU PDTA114TS PDTA114TE PDTA114TT PDTA114TU1 |
PNP resistor-equipped transistors; R1 = 10 kW, R2 = open
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open PNP配电阻型晶体管；R1=10千欧姆，R2=开
|
NXP Semiconductors N.V.
|
| PEMD6 PEMD6_2 |
From old datasheet system
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = OPEN
NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = open
|
NXP Semiconductors
Philips Semiconductors
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PDTA124ES |
PNP resistor-equipped transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTA124EEF |
PNP resistor-equipped transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
