PART |
Description |
Maker |
M62203FP |
3.3 V, 2.7 V Two-Channel Fixed-Output General-Purpose DC-DC Converte
|
Renesas Electronics Corporation
|
NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
|
2SB1063 B1063 |
High Power Amplifier Complementary Pair with 2SD1499 For High Power Amplification
|
PANASONIC[Panasonic Semiconductor]
|
EMC21L1004 EMC21L1004GN |
High Voltage - High Power GaN-HEMT Power Amplifier Module
|
EUDYNA[Eudyna Devices Inc]
|
MT5355-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
AD260 AD260BND-5 AD260AND-0 AD260AND-1 AD260AND-2 |
High Speed, Logic Isolator with Power Transformer SPECIALTY INTERFACE CIRCUIT, PQIP22 High Speed/ Logic Isolator with Power Transformer High Speed Logic Isolator with Power Transformer 40 MBd five channel digital isolator isolated power for Fieldbus, Microcontroller/peripheral interface and data transmission
|
Analog Devices, Inc. AD[Analog Devices]
|
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
TA0012 |
New High Power, High Efficiency HBT GSM Power Amplifier
|
RFMD[RF Micro Devices]
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|