| PART |
Description |
Maker |
| BSP92E-6327 BSP92E6327 |
0.2 A, 240 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET SOT-223, 4 PIN
0.2 A, 240 V, 50 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
SIEMENS A G
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| BSP220/T3 BSP92-T |
225 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SOT-223, 4 PIN
0.18 A, 200 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| STV240N75F3 |
N-channel 75 V, 2.3 mΩ, 240 A PowerSO-10 STripFET III Power MOSFET
|
STMicroelectronics
|
| MRF377R5 MRF377R3 MRF377 |
MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| BSS129E-6296 |
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS A G
|
| 1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| Z1SMA47 Z1SMA75 Z1SMA1 Z1SMA10 Z1SMA100 Z1SMA11 Z1 |
Surface mount Silicon-Zener Diodes (non-planar technology)
320 x 240 pixel format, Mechanical drop in to AGM3224S 43 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
320 x 240 pixel format, CFL backlight available with power harness 56 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
240 x 64 pixel format, LED, or EL Backlight available 17.95 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
320 x 240 pixel format, CFL backlight available with power harness 68 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVF |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT8024B2VR APT8024LVR |
POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
|
