| PART |
Description |
Maker |
| MMDF2N06VL |
DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MMDF2N02E MMDF2N02E_D ON2160 |
From old datasheet system
Medium Power Surface Mount Products
DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MMDF3N04HD ON2182 |
DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MMDF6N02HD MMDF6N02HD_D ON2197 ON2196 |
DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
Medium Power Surface Mount Products
From old datasheet system
|
Motorola, Inc
ON Semi
|
| MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTSF3N02HD ON2662 ON2661 |
SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
| MTW20N50E_D ON2683 MTW20N50E |
TMOS POWER FET 20 AMPERES 500 VOLTS RDS(ON) = 0.24 OHM
From old datasheet system
TMOS POWER FET 20 AMPERES
500 VOLTS
|
ON Semi
Motorola, Inc
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 15 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
