PART |
Description |
Maker |
BSM682F |
MOSFET power module, 800V, 6 x 10A
|
Siemens
|
2SC3457M 2SC3457L |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 3A I(C) | TO-220AB SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN Triple Diffused Planar Transistors 800V 3A
|
Sanyo Semiconductor
|
ST8504 ST8502 ST8501 ST8503 ST6001 ST13070 ST559 S |
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 10A I(C) | TO-204AA TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-204AA TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 2.5A I(C) | TO-204AA TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-204AA IC,COMPLEX-EEPLD,128-CELL,20nS PROP DELAY,LDCC,84PIN,PLASTIC Failsafe 2.5V/ 3.3V Zero Delay Buffer IC FLEX 10K FPGA 30K 208-RQFP IC MAX 7000 CPLD 256 208-RQFP IC FLEX 10K FPGA 50K 240-RQFP IC MCU 3K USB LS PERIPH 16-DIP Single-PLL General-Purpose EPROM Programmable Clock Generator IC, FPGA, 576 LES, PQFP208 2.5V or 3.3V,10- 220 MHz, Low Jitter, 5 Output Zero Delay Buffer 晶体管|晶体管|达林顿|叩| 350V五(巴西)总裁| 40A条一c)|04AE 晶体管|晶体管|达林顿|叩| 400V五(巴西)总裁| 40A条一c)|04AE Failsafe™ 2.5V/ 3.3V Zero Delay Buffer TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 20A I(C) | TO-204AA TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 10A I(C) | TO-204AA
|
|
TSN10A80 |
THYRISTOR - 10A 800V TO-262
|
NIEC[Nihon Inter Electronics Corporation]
|
STU10NB80 |
N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET
|
STMicroelectronics
|
NTE5440 |
Silicon Controlled Rectifier (SCR) 800V, 10A, Isolated Tab
|
NTE[NTE Electronics]
|
STU10NB80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET
|
ST Microelectronics 意法半导
|
2SC3552 |
SI NPN POWER BJT, I(C) = 10A TO 19.9A
|
New Jersey Semi-Conductor Products, Inc.
|
2SC4982 |
Switching Power Transistor(10A NPN)
|
http:// SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
IRFBE20 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A)
|
IRF[International Rectifier]
|
IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|