| PART |
Description |
Maker |
| BAS40- Q62702-D339 BAS40 BAS40-04 BAS40-05 Q62702- |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LMBD301LT1G |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
|
Leshan Radio Company
|
| MA3XD21 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Silicon epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| MA727 MA3X727 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Silicon epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| BAT165 |
Schottky Diodes - Low power Silicon AF Schottky rectifier diode
Silicon Schottky Diode
|
Infineon Technologies AG
|
| DSSK48-0025B |
Power Schottky Rectifier with common cathode
25 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AB PLASTIC PACKAGE-3
Silicon Schottky Diodes
|
IXYS Corporation
IXYS, Corp.
|
| DSSK30-01A IXYSCORP-DSSK30-01A |
Power Schottky Rectifier with common cathode 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD
Silicon Schottky Diodes
|
IXYS, Corp.
IXYS Corporation
|
| BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基（双）二极
SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Comchip Technology
|
| BAT15-04W |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz
|
Infineon
|
| DSSK80-0025B DSSK80-003B DSSK80-0030B |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS[IXYS Corporation]
|
| DSSK80-0045 DSSK80-0045B |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS[IXYS Corporation]
|
