PART |
Description |
Maker |
2N3375 2N33752N3632_2N3733 RF25 2N3733 SD1075 2N36 |
From old datasheet system RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
JDH2S01T |
UHF Band Mixer Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用 Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SC3862 E000891 |
From old datasheet system NPN EPITAXIAL PLANAR TYPE (TY TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
|
Advanced Semiconductor, Inc. ASI
|
2SC4320 E000939 |
From old datasheet system VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
TA4000F |
VHF - UHF WIDE BAND AMPLIFIER VHF~UHF WIDE BAND AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
BLW32 |
UHF linear power transistor(UHF线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
GLP-403 |
UHF US&EU Band
|
Soshin
|