| PART |
Description |
Maker |
| IDT707278 IDT707278L IDT707278L15PF IDT707278L15PF |
HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS 32K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
Low-Noise JFET-Input Operational Amplifier 8-SOIC 0 to 70 32K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
Low-Noise JFET-Input Operational Amplifier 8-SOIC 0 to 70 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
Low-Noise JFET-Input Operational Amplifier 8-SOIC 0 to 70 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
Dual Low-Noise JFET-Input General-Purpose Operational Amplifier 8-PDIP -40 to 85 高2K的16 BANK-SWITC哈布莱双端口SRAM与外部银行选择
Low-Noise JFET-Input Operational Amplifier 8-PDIP 0 to 70
32K x 16 Asynchronous Bank-Switchable Dual-Port SRAM
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT70V7288S07 IDT70V7288L15PFI |
HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS 64K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| IS61C256AH IS61C256AH-20N IS61C256AH-12T IS61C256A |
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 20 ns, PDIP28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 15 ns, PDIP28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
| AS7C513B AS7C513B-20TI AS7C513B-10JC AS7C513B-10JI |
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-PDIP -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
5V 32K x 16 CMOS SRAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 12 ns, PDSO44
High Speed CMOS Logic Dual 2-to-4 Line Decoders/Demultiplexers 16-PDIP -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT70V9079L15PF IDT70V9079L15PFI IDT70V9089L15PF I |
32K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
Small Signal Diode; Package: DO-35; No of Pins: 2; Container: Bulk
64K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
|
SRAM
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT70V7519S IDT70V7519S166DR IDT70V7519S200BF |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56K × 36 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
|
Integrated Device Technology, Inc.
|
| IDT70V07L25PFI |
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQFP80
|
Integrated Device Technology, Inc.
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| IDT70V7339S |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM
|
Integrated Device Techn...
|
| IDT70V7399S IDT70V7399S133BC IDT70V7399S133BCI IDT |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| IDT70V9279S_L IDT70V9279S IDT70V9279L12PRFI IDT70V |
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
32K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
|
IDT
Integrated Device Technology
|
