| PART |
Description |
Maker |
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| MR27V452D |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MSM27C452CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| TC55VZM216AJJN12 TC55VZM216A TC55VZM216AFTN08 TC55 |
262,144-WORD BY 16-BIT CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V400AFT-55 TC55V400AFT-70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55V16256FTI TC55V16256FTI-12 TC55V16256FTI-15 TC |
262, 144-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| MSM54V16272 |
262,144-Word x 16-Bit Multiport DRAM 262,144字16位多端口内存
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM54V16258A |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 262,144字16位动态随机存储器：快速页面模式型与江
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM27C402CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI electronic componets
|
| NM27C256NE100 |
262,144-Bit (32K x 8) High Performance CMOS EPROM 262,144位（32K的8）高性能CMOS存储
|
Fairchild Semiconductor, Corp.
|
| MSM5416273 |
262,144-Word x 16-Bit Multiport DRAM
|
OKI electronic componets
|
