| PART |
Description |
Maker |
| SP6661EU/TR SP6661EN/TR SP6661EN-L SP6661EN-L/TR |
High Frequency 200mA Charge Pump Inverter or Doubler
|
Sipex Corporation
Exar Corporation
|
| CAT661ELA CAT661EVA CAT661EVA-T3 |
High Frequency 100 mA CMOS Charge Pump, Inverter/Doubler
Charge Pump Voltage Converter
|
ON Semiconductor
|
| SP6660 SP6660CN SP6660CP SP6660CU SP6660EB SP6660E |
200mA Charge Pump Inverter or Doubler
|
SIPEX[Sipex Corporation]
|
| P4SMA8.0 P4SMA9.0A P4SMA9.0C P4SMA9.0CA P4SMA9.0 P |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor
Single Output LDO, 200mA, Fixed(3.0V), High PSRR, Low Noise 5-SOT-23 -40 to 85 400W表面贴装瞬态电压抑制器
Single Output LDO, 100mA, Fixed(3.0V), Low Noise, High PSRR 5-SOT-23 -40 to 125 400W表面贴装瞬态电压抑制器
Single Output LDO, 200mA, Fixed(1.8V), High PSRR, Low Noise 5-SOT-23 -40 to 85 400W表面贴装瞬态电压抑制器
400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS 400W表面贴装瞬态电压抑制器
Single Output LDO, 100mA, Adj.(1.2 to 5.5V), Low Noise, High PSRR 6-SOT-23 -40 to 125 400W表面贴装瞬态电压抑制器
Single Output LDO, 250mA, Fixed(2.5V), High PSRR, Low Noise 6-SOT-223 -40 to 85 400W表面贴装瞬态电压抑制器
Single Output LDO, 100mA, Fixed(4.7V), High PSRR, Low Noise 5-SOT-23 -40 to 125
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: 40.0 A; IC(max) @ 100°: 20.0 A
Single Output LDO, 200mA, Fixed(2.85V), High PSRR, Low Noise 5-SOT-23 -40 to 85
Single Output LDO, 250mA, Fixed(1.8V), High PSRR, Low Noise 6-SOT-223 -40 to 85
|
ON Semiconductor
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
http://
|
| AL3157 AL3157F-7 |
Four-Channel High Efficiency Charge Pump
HIGH EFFICIENCY 1x/2x CHARGE PUMP LED DRIVER FOR SMALL SCREEN BACKLIGHTING
|
Diodes Incorporated
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| 15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
|
TOSHIBA
|
| CMBD4148 CMBD1201 CMBD1202 CMBD1203 CMBD1204 CMBD1 |
0.250W SMD Single Switching Diode , 75.0V Vr, 5.000uA Ir, 1.05V Vf @ 200mA If
0.250W SMD Dual Switching Diode , 75.0V Vr, 5.000uA Ir, 1.05V Vf @ 200mA If
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
|
CDIL[Continental Device India Limited]
|
| 2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
