| PART |
Description |
Maker |
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| C30T04QH |
SBD
Schottky Barrier Diode
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| NSH03A10 |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
|
| GCH20A09 |
SBD TYPE
Schottky Barrier Diode
|
Nihon
http://
|
| MA10704 |
Schottky Barrier Diodes (SBD) 0.2 A, 20 V, SILICON, SIGNAL DIODE
|
Panasonic Corporation
Panasonic, Corp.
|
| FCH08U10 NIHONINTERELECTRONICSCORP-FCH08U10 |
8A Avg 100 Volts SBD
Schottky Barrier Diode
|
NIEC[Nihon Inter Electronics Corporation]
|
| UPA508TE-T2 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| MA3Z793 MA793 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5852 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| SCH2808 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
