| PART |
Description |
Maker |
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| ATA7550 ATA7550D1 |
The Anadigics ATA7550D1 is a high-speed 5V transimpedance amplifier (TIA) available in bare die form and manufactured using an InGaP ...
Transimpedance Amplifiers (TIAs)
5.0V 2.5Gb/s TIA
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Seme LAB
|
| ATA01502 ARA2008 ATA01502D1C |
The ATA01502D1C is an AGC Transimpedence Amplifier to be used in the following applications: SONET OC-3/SDH STM-1 Receiver, FDDI ...
Transimpedance Amplifiers (TIAs)
From old datasheet system
Reverse Amplifier with Step Attenuator
AGC Transimpedance Amplifier
|
Anadigics Inc
ATA01501
ANADIGICS[ANADIGICS, Inc]
|
| SE1030W SE103 |
LightCharger?/a> 2.5 Gb/s Transimpedance Amplifier Final
LightCharger2.5 Gb/s Transimpedance Amplifier Final
LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final
LightCharger 2.5 Gb/s Transimpedance Amplifier Final
LightCharger⑩ 2.5 Gb/s Transimpedance Amplifier Final
|
SiGe Semiconductor Inc.
SIGE[SiGe Semiconductor, Inc.]
|
| D2210UK D1231UK D2010 D2010UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
|
| D2001UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-28V-1GHz,Single Ended)(???澶??DMOS灏??纭?????绠?2.5W-28V-1GHz,???寮?)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| MAX3760 MAX3760ESA MAX3760E_D MAX3760E/D |
622Mbps Low-Noise Transimpedance Preamplifier for LAN and WAN Optical Receivers
622Mbps / Low-Noise Transimpedance Preamplifier for LAN and WAN Optical Receivers
8-Bit Registered LVDM Transceiver 64-TSSOP -40 to 85 622Mbps、低噪声互阻前置放大器，用于LAN及WAN光接收器
Quad LVDS Transmitter with Flow-Through Pinout 16-SOIC -40 to 85 ATM/SONET/SDH SUPPORT CIRCUIT, PDSO8
622Mbps, Low-Noise Transimpedance Preamplifier for LAN and WAN Optical Receivers ATM/SONET/SDH SUPPORT CIRCUIT, UUC9
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| TGA4805-EPU |
10GB/s Differential Transimpedance Amplifier
10 GB/s Differential Transimpedance Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| ISL5944207 |
1GHz, 4 x 1 Multiplexing Amplifier
|
Intersil Corporation
|
