| PART |
Description |
Maker |
| IXGQ100N60Y4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
|
|
| GP200MHB12S |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 200安培我（丙）
|
Mitel Networks, Corp.
|
| CM50DY28 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五（巴西）国际消费电子展| 50A条一（c
|
Mitsubishi Electric, Corp.
|
| VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Aimtec
|
| GP350MHB06S |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| SIM150D12SV3 |
“HALF-BRIDGE IGBT Module
“HALF-BRIDGE” IGBT Module
|
SemiWell Semiconductor
|
| DIM200WHS17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| GA400TD60U |
600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
|
IRF[International Rectifier]
|
| BSM100GB170DN2 100B17N2 C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 40MT120UH 40MT120UHT |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
|
IRF[International Rectifier]
|
| IR3101 |
BRUSH DC MOTOR CONTROLLER, 1.6 A, PSIP9
Intelligent Power Module. Gate Driver IC integrated with a half bridge FredFET Designed for sub 250W Motor Drive applications in a 9-Lead SIP. RDSon of 1.0 Ohm
Intelligent Power Module.Gate Driver IC integrated with a half bridge FredFET Designed for sub 250
Half-Bridge FredFet and Integrated Driver
RESISTOR 5.6 OHM 35W TO220
|
IRF[International Rectifier]
|
