| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| MR141L |
RF/LO: 4 to 18 GHz IF: to 500 MHz
|
API Technologies Corp
|
| T1P2701012-SP |
500 MHz - 3 GHz pHEMT RF Power Transistor
|
TriQuint Semiconductor
|
| PE2243-30 |
Directional 30 dB SMA Coupler From 500 MHz to 18 GHz Rated To 30 Watts
|
Pasternack Enterprises,...
|
| T1L2003028-SP |
30 W, 28V, 500 MHz-2 GHz, PowerbandTM LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| BAR63-04W BAR63-05W BAR63-06W BAR63-W BAR6304W Q62 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) 硅PIN二极管（PIN二极管高速射频信号低正向电阻非常低电容开关频率高 GHz
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TLT-8-2014 TLT-8-2013 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| PE6800 PE6800-16 |
0.5 Watts Low Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CLT-13-6016 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
