| PART |
Description |
Maker |
| ESLB-P540A ESLB-P540A-2 ESLB-P540A-1 |
4.9-5.9GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| FMPA215107 FMPA2151 |
2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
2.4-2.5GHz and 4.95.9GHz Dual Band Linear Power Amplifier Module
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| GSC351-HYB1900 |
1.9GHz Band 90Deg. Chip Hybrid Coupler
|
Soshin
|
| MRFIC1813 |
1.9GHz GaAs Upconverter(1.9GHz GaAs 上转换器)
1.9 GHz UPMIXER AND EXCITER AMPLIFIER
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| SPM2001A |
GaAs MMIC For 1.9GHz PHS Transmitting Amplifier(砷化1.9GHz PHS发射放大 砷化镓微波单片集成电路为1.9GHz的小灵通发射放大器（砷化镓1.9GHz的小灵通发射放大器
From old datasheet system
MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TSOP,6PIN,PLASTIC
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor Corp
|
| BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MAPR-002729-170M00 |
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100μsec, 170W
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100レsec, 170W
|
MACOM[Tyco Electronics]
|
| CHA5250-QDG CHA5250-QDG-15 |
5.5-9GHz Medium Power Amplifier
|
United Monolithic Semic...
|
| TGB2010-SM |
5GHz - 9GHz Packaged Bessel Filter
|
TriQuint Semiconductor
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| ALM-31222 ALM-31122 ALM-31322 ALM-32120 ALM-32220 |
3.3GHz 3.9GHz 2 Watt High Linearity Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| TIM5964-16UL TIM5964-16UL09 |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
