| PART |
Description |
Maker |
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| MJE13007-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007G-TA3-T MJE13007G-TF3-T MJE13007-TA3-T |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
UNISONIC TECHNOLOGIES CO LTD
|
| FA5316P FA5311BP FA5317P FA5310BP |
Bipolar IC for Switching Power Supply Control
|
Fujitsu
|
| FA7615CP FA7615CPE |
FA7615CPE Bipolar IC For Switching Power Supply Control
|
FUJI[Fuji Electric]
|
| BUL146-D BUL146F |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
Power 8A 400V NPN
|
ON Semiconductor
|
| 2STX136007 2STX1360 |
Low voltage fast-switching NPN power bipolar transistors
|
STMicroelectronics
|
| GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
