PART |
Description |
Maker |
PTB20051 |
6 Watts, 1.465.513 GHz Cellular Radio RF Power Transistor 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTB20105 |
20 Watts, 92560 MHz Cellular Radio RF Power Transistor 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTB20171 |
25 Watts, 935-960 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOSField Effect Transistor 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PE6802 PE6802-16 |
0.5 Watts Low Power WR-42 Waveguide Load 18 GHz to 26.5 GHz
|
Pasternack Enterprises,...
|
PE6818 |
40 Watts Medium Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
HMC420QS16E HMC420QS1610 |
CELLULAR RFIC DOWNCONVERTER, 0.7 - 1.0 GHz
|
Hittite Microwave Corporation Hittite Microwave Corporati...
|
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫,200レ拧脉冲10职务
|
MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
|