| PART |
Description |
Maker |
| NTE103ANPN |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE
|
| NTE135 NTE131 |
Germanium Complementary Transistors Audio Power Amplifier
|
NTE[NTE Electronics]
|
| NTE103NPN |
Germanium Complementary Transistors Power Output / Driver
|
NTE
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| 1N34A |
GERMANIUM DIODE 0.05 A, 75 V, GERMANIUM, SIGNAL DIODE, DO-7
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 2N3773 2N6609 ON0042 |
From old datasheet system
COMPLEMENTARY POWER TRANSISTORS
Complementary Slllcon Powar Translstors
|
ONSEMI[ON Semiconductor]
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| OA1182 |
GERMANIUM DIODE
|
BK
|
| 1N60 1N60P |
GERMANIUM DIODES
|
Daesan Electronics Corp.
|
| G1607 |
GERMANIUM DIODE
|
BKC
|
| 1N4502 |
GERMANIUM DIODE
|
New Jersey Semi-Conductor Products, Inc.
|
|
