| PART |
Description |
Maker |
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5DS573222F-28 HY5DS573222FP-28 HY5DS573222FP-36 |
GDDR SDRAM - 256Mb
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
| HY5DU113222FMP-25 HY5DU113222FMP-22 HY5DU113222FMP |
GDDR SDRAM - 512Mb
|
Hynix Semiconductor
|
| HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM |
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU573222F-2 HY5DU573222F-22 HY5DU573222F-25 HY5 |
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222AQ HY5DU283222AQ-33 HY5DU283222AQ-36 HY |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Panasonic, Corp.
Samsung Semiconductor Co., Ltd.
|
| HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG
Infineon Technologies A...
|
