| PART |
Description |
Maker |
| U20C60 U20C30 U20C40 U20C50 |
POWER RECTIFIERS(20A/300-600V)
POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| F16C60 F16C40 F16C30 F16C50 |
POWER RECTIFIERS(16A/300-600V)
POWER RECTIFIERS(16A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| APT6030BVR APT6030 |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| H16C60 H16C30 H16C40 H16C50 |
HIGH EFFICIENCY RECTIFIERS(16A,300-600V) 高效率整流二极管6A300 - 600V的）
HIGH EFFICIENCY RECTIFIERS(16A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| MJE585006 MJE5850G MJE5852G MJE5850 MJE5851 MJE585 |
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
| APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRFBC30S IRFBC30L |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
|
IRF[International Rectifier]
|
| IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
| IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
