| PART |
Description |
Maker |
| TPC8402 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (MOSVI/U−MOSII)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SK184 |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Toshiba Semiconductor
|
| 2SK3316 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K324R |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
|
Toshiba Semiconductor
|
| TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 2SK3762 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3K124TU-14 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J135TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| TPC8102 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC6101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
TOSHIBA[Toshiba Semiconductor]
|
