| PART |
Description |
Maker |
| 40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| MCRF355 MCRF360 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
|
Microchip
|
| 2SA0886 2SA886 |
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic Corporation
Panasonic, Corp.
|
| 2SB943 2SD1268 |
Silicon PNP epitaxial planar type(For power switching) 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MJL4302A MJL4281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA
From old datasheet system
POWER TRANSISTOR, NPN
350V Audio Transistor, PNP
350V Audio Transistor, NPN
|
ON Semiconductor
ONSEMI
|
| BSP31-T BSP32 BSP33-T |
1 A, 60 V, PNP, Si, POWER TRANSISTOR
PNP medium power transistors
1 A, 80 V, PNP, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
|
| 2N4399 |
PNP Silicon High-Power Transistor(60V（集电极-发射极）硅PNP大功率晶体管) 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| 2SA1319-AA 2SB631-LS 2SD600K-LS 2SB631-YA 2SA1249- |
700 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
1 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-126
1.5 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-126
|
SANYO SEMICONDUCTOR CO LTD
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
|
