| PART |
Description |
Maker |
| STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
|
STMicroelectronics
|
| HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A |
14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S7N60C3DS9A |
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRGBC30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| IRF350 JANTX2N6768 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.300ohm/ Id=14A)
|
International Rectifier
|
| IRGS14B40L |
14A, Voltage Clamped 400V IGBT(14A,电压箝位400V双极型晶体管)
|
International Rectifier
|
| IRFP244 IRFP245 IRFP246 IRFP247 |
15A and 14A 275V and 250V 0.28 and 0.34 Ohm N-Channel Power MOSFETs
(IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HUF75823D3S HUF75823D3 |
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET
14A 150V 0.150 Ohm N-Channel UltraFET Power MOSFET
14A, 150V, 0.150 Ohm, N-Channel, UltraFETPower MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
