| PART |
Description |
Maker |
| MSU2031C16 MSU2031C25 MSU2031C40 MSU2031L16 MSU203 |
low working voltage 16 MHz ROM less MCU
|
MOSEL[Mosel Vitelic, Corp]
|
| V120MLA1210 V18MLA1210 V26MLA1210 V30MLA1210 V30ML |
Surface mount varistor. Ag/Pd. Max continuous working voltage: 3.5VDC, 2.5VAC. Bulk pack.
Surface mount varistor. Ag/Pt. Max continuous working voltage: 3.5VDC, 2.5VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 9VDC, 6.5VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 30VDC, 25VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 18VDC, 14VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 12VDC, 9.0VAC. 7in diameter reel.
Surface mount varistor. Nickel barrier. Max continuous working voltage: 14VDC, 10VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 68VDC, 50VAC. 13in diameter reel.
Multilayer Transient Voltage Surge Suppressors 多层瞬态电压浪涌抑制器
Surface mount varistor. Ag/Pt. Max continuous working voltage: 33VDC, 26VAC. Bulk pack.
Surface mount varistor. Ag/Pt. Max continuous working voltage: 33VDC, 26VAC. 7in diameter reel.
Surface mount varistor. Ag/Pt. Max continuous working voltage: 33VDC, 26VAC. 13in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 33VDC, 26VAC. Bulk pack.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 33VDC, 26VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 33VDC, 26VAC. 13in diameter reel.
Surface mount varistor. Nickel barrier. Max continuous working voltage: 9VDC, 6.5VAC. 7in diameter reel.
Surface mount varistor. Nickel barrier. Max continuous working voltage: 18VDC, 14VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 5.5VDC, 4.0VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 3.5VDC, 2.5VAC. 7in diameter reel.
Surface mount varistor. Ag/Pd. Max continuous working voltage: 48VDC, 40VAC. 7in diameter reel.
Multilayer Transient Voltage Surge Suppressors
Surface mount varistor. Ag/Pt. Max continuous working voltage: 3.5VDC, 2.5VAC. Bulk pack.
Surface mount varistor. Ag/Pt. Max continuous working voltage: 3.5VDC, 2.5VAC. 13in diameter reel.
|
Littelfuse, Inc.
LITTELFUSE[Littelfuse]
|
| P80C51 P80C51RA P87C51FA P87C51FB P87C51FC P87C51R |
80C51 8-bit microcontroller family 8K-64K/256-1K OTP/ROM/ROMless, low voltage 2.7V-5.5V), low power, high speed (33 MHz)
|
Philips
|
| Z86L8608PSC Z86L8608SSC |
IR/Low-voltage microcontroller. 8.0 MHz, 32 (KB) ROM, 237 (bytes) RAM, I/O 23, 2.0 V to 3.9 V
|
Zilog
|
| 87C38X2 87C34X2 87C32X2 87C31X2 80C31X2 P87C52 P87 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz
|
Philips Semiconductors
NXP
|
| 80C54X2 P80C34X2 P87C54X2BDH P80C32X2BBD P87C54X2B |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz
|
PHILIPS[Philips Semiconductors]
|
| 80C51 P80C51SBAA P80C51SBBB P80C51SBPN P80C51SFAA |
80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless low voltage 2.7V.5.5V low power high speed 33 MHz
80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless low voltage 2.7V.5.5V, low power, high speed 33 MHz
|
PHILIPS[Philips Semiconductors]
|
| P87C54 TLE2024 P87C51FA P80C58SBAA P80C58SFAA P80C |
80C51 8-bit microcontroller family 8K-4K/256-1K OTP/ROM/ROMless, low voltage (2.7V-5.5V), low power, high speed (33 MHz)
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless low voltage 2.7V.5.5V low power high speed 33 MHz
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless, low voltage 2.7V.5.5V, low power, high speed 33 MHz
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| ZLR32300H4808G |
Z8 Low-Voltage ROM MCU with Infrared Timers 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO48
|
ZiLOG, Inc.
|
| ZCRMZNICE01ZACG ZCRMZNICE01ZEMG ZCRMZNICE02ZACG ZL |
Low-Voltage ROM MCU with Infrared Timers
8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO48 LEAD FREE, SSOP-48
|
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA，低噪声，低压差线性稳压器的开/
RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY
CAP CERAMIC MONO .1UF 50V 10%
Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes
Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
|
TE Connectivity, Ltd.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
