| PART |
Description |
Maker |
| K9F2808U0C K9F2808U0C-F K9F2808U0C-FCB0 K9F2808U0C |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
16M x 8 bit NAND flash memory, 2.7 - 3.6V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F5616Q0B/K9F5616U0B |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| MBM29DL16XBD-90 MBM29DL16XTD-70 MBM29DL16XTD-90 MB |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
|
Fujitsu Microelectronics
|
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
| MBM29LV160T-80PFTR MBM29LV160B-12PFTR MBM29LV160B- |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO48
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Spansion, Inc.
|
| K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX69F1602C3TXBI-70 MX69F1602C3TXBI-90 |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY SPECIALTY MEMORY CIRCUIT, PBGA66
|
Macronix International Co., Ltd.
|
| AM29LV256MH40FF L256ML113RI AM29LV256MH30FF AM29LV |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 110 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
