| PART |
Description |
Maker |
| ZXMN6A09G07 |
60V SOT223 N-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
| ZXMN6A09G ZXMN6A09GTA |
60V SOT223 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZXMN6A09G_07 ZXMN6A09G ZXMN6A09GTA |
60V SOT223 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMN6A08G ZXMN6A08GTA |
60V SOT223 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZXMN6A25GTA |
60V SOT223 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZVN4210G-15 |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
| BCX54 BCP54 BCX54-10 BCX54-16 BCP54-16 BC635 BC635 |
45 V, 1 A NPN medium power transistors
Si, POWER TRANSISTOR
BCP54<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;BCP54<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;BCP54-16<SOT223 (SC-73)|<<http:
NPN medium power transistors
|
NXP[NXP Semiconductors]
NXP Semiconductors N.V.
|
| ARF447 ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| BSP75G BSP75G2 |
Ultra Low Capacitance Transient Voltage Suppressor Diodes
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET?/a> MOSFET
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET⑩ MOSFET
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET??MOSFET
IntelliFET™ 60V self protected MOSFET
|
List of Unclassifed Manufacturers
ETC
N.A.
Zetex Semiconductors
|
| NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道：漏电流3A, 漏源电压20V，导通电.06Ω；P沟道：漏电流-2A, 漏源电压-20V，导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
