PART |
Description |
Maker |
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM 65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group SONY
|
TC531024F-15 TC531024P-12 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
Electronic Theatre Controls, Inc.
|
CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
CXK5B16120J CXK5B16120J-12 CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
M5M51R16AWG-10LI D98010 M5M51R16AWG-15LI M5M51R16A |
From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM |
128 x 64 pixel format, LED Backlight available -65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
CXK5V16100TM-10LLX CXK5V16100TM-85LLX CXK5V16100TM |
128 x 64 pixel format, LED Backlight available 65536-word X 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
HM6709A HM6709AJP-15 HM6709AJP-20 |
65536-WORD 4 BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY
|
Hitachi Semiconductor
|
MSM511664C |
65536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM 262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar LG[LG Semicon Co.,Ltd.]
|