PART |
Description |
Maker |
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209 36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
VM118-4F VM118-2PO VM118-6P VM118-6PL VM118-6PO VM |
6-Channel Read/Write Circuit 6通道写电 4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电 2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Digital Data Communications GmbH Stackpole Electronics, Inc.
|
GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
EM4095 EM4095HMSO16A |
Read / Write Analog Front End Read/Write analog front end for 125kHz RFID Basestation
|
EM Microelectronic - MARIN SA ETC
|
CXA3171N |
4ch. Read/Write Amplifier for three terminal MIG 4ch. Read/Write Amplifier for three terminal MIG Head of Hard Disk Drive
|
SONY[Sony Corporation]
|
GS8170LW36C-333 GS8170LW36C-250 GS8170LW36C-250I G |
333MHz 512K x 36 18MB double late write sigmaRAM SRAM 250MHz 512K x 36 18MB double late write sigmaRAM SRAM 300MHz 512K x 36 18MB double late write sigmaRAM SRAM 333MHz 256K x 72 18MB double late write sigmaRAM SRAM 250MHz 256K x 72 18MB double late write sigmaRAM SRAM 300MHz 1M x 18 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
SSI32R2210X-4CL SSI32R2210X-4CV SSI32R2210W-4CV SS |
2-Channel Disk Read/Write Circuit 4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Ecliptek, Corp. Linear Technology, Corp.
|