PART |
Description |
Maker |
M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 |
From old datasheet system 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD |
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式(4194304 - Word6位)动态随机存储器 From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M54R01J-12 M5M54R01J-15 D98020 |
PTSE 19C 19#20 SKT RECP From old datasheet system 4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MH4V64AWXJ-5 MH4V64AWXJ-6 |
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM 快速页面模68435456 -位(4194304 - Word64 -位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MSC23S4721E-8BS18 MSC23S4721E |
4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): 4194304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): From old datasheet system 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字2位同步动态RAM模块) 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字72位同步动态RAM模块)
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OKI electronic componet... OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
TC55VDM536AFFN15 TC55VDM536AFFN22 TC55VDM536AFFN16 |
36M 3.3V Pipelined NtRAM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
MSM27C3252CZ MSM27C32B52CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
TC5116400J |
4194304 word x 4 Bit Dynamic Ram
|
Toshiba
|
TC5116400BSJ |
4194304 word x 4 Bit Dynamic Ram
|
Toshiba
|
M5M44265CJ M5M44265CJ-5 M5M44265CJ-5S M5M44265CJ-6 |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|