| PART |
Description |
Maker |
| AM29F040 AM29F040-120EC AM29F040-120ECB AM29F040-1 |
4 Megabit (524/288 x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| TC554001FTL-10V TC554001FTL-85V |
524, 288 words x 8 bit static RAM, access time 100ns
524, 288 words x 8 bit static RAM, access time 85ns
|
TOSHIBA
|
| M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MR27V401E MR27V401ETA MR27V401ERA MR27V401EMA |
524,288-Word × 8-Bit One Time PROM
524,288-Word 】 8-Bit One Time PROM
|
OKI[OKI electronic componets]
|
| TC554001AFT-85V TC554001AFT-70V TC554001ATR-10V TC |
524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA
|
| MSM538052E |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM
From old datasheet system
|
OKI
|
| TC55VZM208AFTI-08 TC55VZM208AJJI-08 TC55VZM208AFTI |
524,288-WORD BY 8-BIT CMOS STATIC RAM
|
TOSHIBA
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TC55W800XB8 TC55W800XB7 |
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| TC55VCM208ASTN40 TC55VCM208ASTN55 |
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| MD56V62320 |
4-Bank x 524,288-Word x 32-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
