PART |
Description |
Maker |
ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件 ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins From old datasheet system 250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp. Atmel Corp
|
IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28 Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
ISPLSI2096A-100LT128 ISPLSI2096A-125LT128 ISPLSI20 |
Electrically-Erasable Complex PLD Electrically-ErasableComplexPLD
|
|
IS25C64A IS25C64A-2GI IS25C64A-2GLI IS25C64A-2PI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM 8K X 8 SPI BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc. http://
|
BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L |
1024×8 bit electrically erasable PROM 1024 bit electrically erasable PROM 1024位电可擦除可编程ROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
PALCE29M16H-35PC PALCE29M16H-35DC |
Electrically-Erasable PLD
|
|
PALCE29MA16H-35PC |
Electrically-Erasable PLD
|
|
PALCE20V8H-15E4/B3A PALCE20V8H-15E4/BLA PALCE20V8H |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Honda Tsushin Kogyo Co., Ltd.
|